Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
7.6 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Drain Source Resistance:
380 mΩ
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
440 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
UniFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Rds On (Max) @ Id, Vgs:
360mOhm @ 3.8A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Power Dissipation (Max):
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
585 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C:
7.6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
