Category:
Power MOSFET
Dimensions:
10.67 x 4.7 x 16.3mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
207 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3565 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
37 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
UltraFET
Maximum Gate Source Voltage:
±20 V
Height:
16.3mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
