Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1905 pF @ 100 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
UltraFET
Maximum Gate Source Voltage:
±20 V
Height:
1.575mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
148 mΩ
