Category:
Power MOSFET
Dimensions:
4 x 5 x 1.5mm
Maximum Continuous Drain Current:
2.7 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
176 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
158 pF@ 50 V
Length:
4mm
Pin Count:
8
Typical Turn-Off Delay Time:
7.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
31 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
4.2 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
4.1nC @ 10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C:
2.7A
Configuration:
2 N-Channel (Dual)
Package:
Bulk
Drain to Source Voltage (Vdss):
100V
Input Capacitance (Ciss) (Max) @ Vds:
210pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
