Category:
Power MOSFET
Dimensions:
4 x 5 x 1.5mm
Maximum Continuous Drain Current:
2.1 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
80 V
Maximum Drain Source Resistance:
310 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
661 pF @ -40 V
Length:
4mm
Pin Count:
8
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.1 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
RoHS Status:
RoHS non-compliant
Series:
*
Package:
Tape & Reel (TR)
REACH Status:
Vendor Undefined
