Category:
Power MOSFET
Dimensions:
3.05 x 3.05 x 0.91mm
Maximum Continuous Drain Current:
3.8 A
Transistor Material:
Si
Width:
3.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
MSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
825 pF @ -25 V
Length:
3.05mm
Pin Count:
8
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
±20 V
Height:
0.91mm
Typical Turn-On Delay Time:
4.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
100 mΩ
