Vishay SIA915DJ-T1-GE3 Dual P-channel MOSFET, 3.7 A, 30 V, 6-Pin SC-70

SIA915DJ-T1-GE3 Vishay  Dual P-channel MOSFET, 3.7 A, 30 V, 6-Pin SC-70
Vishay

Product Information

Category:
Power MOSFET
Dimensions:
2.15 x 2.15 x 0.8mm
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
2.15mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SC-70
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
275 pF @ -10 V
Length:
2.15mm
Pin Count:
6
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.5 W
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
145 mΩ
RoHs Compliant
Checking for live stock

This is Dual P-channel MOSFET 3.7 A 30 V 6-Pin SC-70 manufactured by Vishay. The manufacturer part number is SIA915DJ-T1-GE3. It is of power mosfet category . The given dimensions of the product include 2.15 x 2.15 x 0.8mm. While 3.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.15mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of sc-70. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 275 pf @ -10 v . Its accurate length is 2.15mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 15 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 6.5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.8mm. In addition, it has a typical 35 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 145 mω maximum drain source resistance.

pdf icon
SiA915DJ, Dual P-Channel 30V (D-S) MOSFET(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SIA915DJ-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET13819231. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIA915DJ-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIA915DJ-T1-GE3 Dual P-channel MOSFET, 3.7 A, 30 V, 6-Pin SC-70. You can also check on our website or by contacting our customer support team for further order details on Vishay SIA915DJ-T1-GE3 Dual P-channel MOSFET, 3.7 A, 30 V, 6-Pin SC-70.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13819231 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13819231.
Yes. We ship SIA915DJ-T1-GE3 Internationally to many countries around the world.