Category:
Power MOSFET
Dimensions:
10.414 x 9.652 x 4.826mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
9.652mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Drain Source Resistance:
7.7 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
105 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6190 pF @ 30 V
Length:
10.41mm
Pin Count:
3
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.826mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
