Category:
Power MOSFET
Dimensions:
9.9 x 4.5 x 9.2mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2456 pF@ 25 V
Length:
9.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
312.5 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
9.2mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
220 mΩ
