Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.1mm
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
ChipFET
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.7 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
710 pF @ -5 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
42 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.1mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
83 mΩ
Manufacturer Standard Lead Time:
2 Weeks
Rds On (Max) @ Id, Vgs:
46mOhm @ 3.9A, 4.5V
Detailed Description:
P-Channel 20V 3.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Supplier Device Package:
ChipFET™
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
