Configuration:
Single
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Gate Source Voltage:
-25 V
Idss Drain-Source Cut-off Current:
Min. 40mA
Source Gate On-Capacitance:
85pF
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Maximum Drain Source Resistance:
12 Ω
Package Type:
TO-92
Maximum Drain Gate Voltage:
25V
Minimum Operating Temperature:
-55 °C
Drain Gate On-Capacitance:
85pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
J109
Detailed Description:
JFET N-Channel 25V 625mW Through Hole TO-92-3
Voltage - Breakdown (V(BR)GSS):
25V
Mounting Type:
Through Hole
Current - Drain (Idss) @ Vds (Vgs=0):
40mA @ 15V
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Resistance - RDS(On):
12 Ohms
Voltage - Cutoff (VGS off) @ Id:
2V @ 10nA
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
625mW
Manufacturer:
ON Semiconductor
