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Fairchild Semiconductor HGTP12N60A4D

HGTP12N60A4D Fairchild Semiconductor
Fairchild Semiconductor

Product Information

Current - Collector (Ic) (Max):
54 A
Reverse Recovery Time (trr):
30 ns
HTSUS:
8542.39.0001
Switching Energy:
55µJ (on), 50µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 12A
Td (on/off) @ 25°C:
17ns/96ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3
Gate Charge:
78 nC
edacadModel:
HGTP12N60A4D Models
Voltage - Collector Emitter Breakdown (Max):
600 V
edacadModelUrl:
/en/models/13453210
Test Condition:
390V, 12A, 10Ohm, 15V
Package:
Bulk
IGBT Type:
-
Current - Collector Pulsed (Icm):
96 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Power - Max:
167 W
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is HGTP12N60A4D. The maximum collector current includes 54 a. It has a trr (reverse recovery time) of 30 ns. It is assigned with possible HTSUS value of 8542.39.0001. Provide switching energy up to 55µj (on), 50µj (off). Features 2.7v @ 15v, 12a. Td (on/off) value of 17ns/96ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 78 nc gate charge. The maximum collector emitter breakdown voltage of the product is 600 v. Test condition included 390v, 12a, 10ohm, 15v. It is shipped in bulk package . With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-220-3 is the supplier device package value. The maximum power of the product is 167 w. The product is designated with the ear99 code number.

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