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This is manufactured by onsemi. The manufacturer part number is NGTB50N65FL2WG. The maximum collector current includes 100 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220 nc gate charge. It has a trr (reverse recovery time) of 94 ns. In addition, it is reach unaffected. Provide switching energy up to 1.5mj (on), 460µj (off). Test condition included 400v, 50a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 17 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 417 w. Moreover, it corresponds to ngtb50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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