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This is ON Semiconductor IGBT 80 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB40N120IHRWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 384 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 950µj (off). Features 2.55v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of -/230ns. The product has -40°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 225 nc gate charge. In addition, it is reach unaffected. Test condition included 600v, 40a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. The maximum power of the product is 384 w. Moreover, it corresponds to ngtb40, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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