ON Semiconductor NGTB25N120SWG IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Product Information
Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
385 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
4420pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50 A
Reverse Recovery Time (trr):
154 ns
HTSUS:
8541.29.0095
Switching Energy:
1.95mJ (on), 600µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max):
1200 V
Td (on/off) @ 25°C:
87ns/179ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
178 nC
edacadModel:
NGTB25N120SWG Models
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/5267846
Test Condition:
600V, 25A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
IGBT Type:
Trench
Current - Collector Pulsed (Icm):
100 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
385 W
Base Product Number:
NGTB25
ECCN:
EAR99
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This is ON Semiconductor IGBT 50 A 1200 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB25N120SWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 385 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has approximately 4420pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 50 a. It has a trr (reverse recovery time) of 154 ns. It is assigned with possible HTSUS value of 8541.29.0095. Provide switching energy up to 1.95mj (on), 600µj (off). Features 2.4v @ 15v, 25a. The maximum collector emitter breakdown voltage of the product is 1200 v. Td (on/off) value of 87ns/179ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 178 nc gate charge. In addition, it is reach unaffected. Test condition included 600v, 25a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 385 w. Moreover, it corresponds to ngtb25, a base product number of the product. The product is designated with the ear99 code number.
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