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This is IGBT 100 A 650 V 3-Pin TO-247 manufactured by ON Semiconductor. The manufacturer part number is FGHL50T65SQDT. Provides up to 134 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±30.0v gate emitter voltage . The package is a sort of to-247. It contains 3 pins. The product offers single transistor configuration. It has typical 48 weeks of manufacturer standard lead time. The maximum collector current includes 100a. It features igbt trench field stop 650v 100a 268w through hole to-247-3. Features 2.1v @ 15v, 50a. Td (on/off) value of 22.8ns/70ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 99.7nc gate charge. Base Part Number: fghl50. The maximum collector emitter breakdown voltage of the product is 650v. Provide switching energy up to 223µj (on), 91.13µj (off). Test condition included 400v, 12.5a, 4.7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 268w.
For more information please check the datasheets.
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