Renesas Electronics America RJP65T54DPM-E0#T2
Product Information
Gate Charge:
72nC
Td (on/off) @ 25°C:
35ns/120ns
Detailed Description:
IGBT Trench 650V 60A 63.5W Through Hole TO-3PF
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
1.68V @ 15V, 30A
Supplier Device Package:
TO-3PF
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Tube
Switching Energy:
330µJ (on), 760µJ (off)
Operating Temperature:
175°C (TJ)
Power - Max:
63.5W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3PFM, SC-93-3
IGBT Type:
Trench
Test Condition:
400V, 30A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
225A
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJP65T54DPM-E0#T2. Features 72nc gate charge. Td (on/off) value of 35ns/120ns. It features igbt trench 650v 60a 63.5w through hole to-3pf. The product is available in through hole configuration. The maximum collector current includes 60a. Features 1.68v @ 15v, 30a. to-3pf is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 330µj (on), 760µj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 63.5w. It carries standard input type. Moreover, the product comes in to-3pfm, sc-93-3. Features an IGBT trench type. Test condition included 400v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The renesas electronics america's product offers user-desired applications.
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