ON Semiconductor FGY75T95SQDT
Product Information
Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
434 W
Maximum Collector Emitter Voltage:
950 V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
150A
Detailed Description:
IGBT Trench Field Stop 950V 150A 434W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.11V @ 15V, 75A
Td (on/off) @ 25°C:
28.8ns/117ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
137nC
Base Part Number:
FGY75
Voltage - Collector Emitter Breakdown (Max):
950V
Reverse Recovery Time (trr):
259ns
Switching Energy:
8.8mJ (on), 3.2mJ (off)
Test Condition:
600V, 75A, 4.7Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
300A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
434W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship FGY75T95SQDT Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGY75T95SQDT. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 434 w maximum power dissipation. Whereas features a 950 v of collector emitter voltage (max). The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 150a. It features igbt trench field stop 950v 150a 434w through hole to-247-3. Features 2.11v @ 15v, 75a. Td (on/off) value of 28.8ns/117ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 137nc gate charge. Base Part Number: fgy75. The maximum collector emitter breakdown voltage of the product is 950v. It has a trr (reverse recovery time) of 259ns. Provide switching energy up to 8.8mj (on), 3.2mj (off). Test condition included 600v, 75a, 4.7ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 434w.
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