Rohm Semiconductor RGW80TS65DGC11

RGW80TS65DGC11 Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Current - Collector (Ic) (Max):
78A
Detailed Description:
IGBT Trench Field Stop 650V 78A 214W Through Hole TO-247N
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 40A
Td (on/off) @ 25°C:
44ns/143ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
110nC
Base Part Number:
RGW80
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
92ns
Switching Energy:
760µJ (on), 720µJ (off)
Test Condition:
400V, 40A, 10Ohm, 15V
Manufacturer:
Rohm Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247N
Packaging:
Tube
Power - Max:
214W
Customer Reference:
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RGW80TS65DGC11. It has typical 17 weeks of manufacturer standard lead time. The maximum collector current includes 78a. It features igbt trench field stop 650v 78a 214w through hole to-247n. Features 1.9v @ 15v, 40a. Td (on/off) value of 44ns/143ns. The product has -40°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 110nc gate charge. Base Part Number: rgw80. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 92ns. Provide switching energy up to 760µj (on), 720µj (off). Test condition included 400v, 40a, 10ohm, 15v. The rohm semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247n is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 214w.

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RGW80TS65D(Datasheets)

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