Dimensions:
15.8 x 5.2 x 22.74mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
P
Maximum Continuous Collector Current:
200 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Gate Capacitance:
5100pF
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Energy Rating:
160µJ
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Current - Collector (Ic) (Max):
200A
Detailed Description:
IGBT Trench Field Stop 650V 200A 375W Through Hole TO-247-4L
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 75A
Td (on/off) @ 25°C:
44ns/208ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-4
Gate Charge:
152nC
Base Part Number:
FGH75
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
134ns
Switching Energy:
1.25mJ (on), 1.26mJ (off)
Test Condition:
400V, 75A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Power - Max:
375W
Customer Reference:
