Renesas Electronics America RJH65T04BDPMA0#T2F
Product Information
Gate Charge:
74nC
Td (on/off) @ 25°C:
35ns/115ns
Detailed Description:
IGBT Trench 650V 60A 65W Through Hole TO-3PFP
Reverse Recovery Time (trr):
80ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 30A
Supplier Device Package:
TO-3PFP
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Tube
Switching Energy:
360µJ (on), 350µJ (off)
Operating Temperature:
175°C (TJ)
Power - Max:
65W
Customer Reference:
Input Type:
Standard
Package / Case:
SC-94
IGBT Type:
Trench
Test Condition:
400V, 30A, 10Ohm, 15V
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH65T04BDPMA0#T2F. Features 74nc gate charge. Td (on/off) value of 35ns/115ns. It features igbt trench 650v 60a 65w through hole to-3pfp. It has a trr (reverse recovery time) of 80ns. The product is available in through hole configuration. The maximum collector current includes 60a. Features 1.95v @ 15v, 30a. to-3pfp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 650v. In addition, tube is the available packaging type of the product. Provide switching energy up to 360µj (on), 350µj (off). The product has 175°c (tj) operating temperature range. The maximum power of the product is 65w. It carries standard input type. Moreover, the product comes in sc-94. Features an IGBT trench type. Test condition included 400v, 30a, 10ohm, 15v. The renesas electronics america's product offers user-desired applications.
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