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This is manufactured by ON Semiconductor. The manufacturer part number is SGP23N60UFTU. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 23 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: sgp23n60. It features igbt 600v 23a 100w through hole to-220-3. The maximum collector current includes 23a. Features 2.6v @ 15v, 12a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 115µj (on), 135µj (off). Td (on/off) value of 17ns/60ns. The maximum power of the product is 100w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 12a, 23ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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