ON Semiconductor SGH40N60UFDTU
Product Information
Gate Charge:
97nC
Base Part Number:
SGH40
Detailed Description:
IGBT 600V 40A 160W Through Hole TO-3P
Reverse Recovery Time (trr):
60ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 20A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3P
Packaging:
Tube
Switching Energy:
160µJ (on), 200µJ (off)
Td (on/off) @ 25°C:
15ns/65ns
Power - Max:
160W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 20A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
160A
Manufacturer:
ON Semiconductor
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Yes. We ship SGH40N60UFDTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is SGH40N60UFDTU. Features 97nc gate charge. Base Part Number: sgh40. It features igbt 600v 40a 160w through hole to-3p. It has a trr (reverse recovery time) of 60ns. The product is available in through hole configuration. The maximum collector current includes 40a. Features 2.6v @ 15v, 20a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 160µj (on), 200µj (off). Td (on/off) value of 15ns/65ns. The maximum power of the product is 160w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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