Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
223 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
100 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Trench Field Stop 600V 100A 223W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 50A
Td (on/off) @ 25°C:
116ns/292ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
310nC
Base Part Number:
NGTB50
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
85ns
Switching Energy:
1.1mJ (on), 600µJ (off)
Test Condition:
400V, 50A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
223W
Customer Reference:
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N60FLWG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 223 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 100 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100a. It features igbt trench field stop 600v 100a 223w through hole to-247. Features 1.9v @ 15v, 50a. Td (on/off) value of 116ns/292ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 310nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 85ns. Provide switching energy up to 1.1mj (on), 600µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 223w.
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