ON Semiconductor HGTP12N60A4D
Product Information
Gate Charge:
78nC
Base Part Number:
HGTP12N60
Detailed Description:
IGBT 600V 54A 167W Through Hole TO-220-3
Reverse Recovery Time (trr):
30ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
54A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 12A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220-3
Packaging:
Tube
Switching Energy:
55µJ (on), 50µJ (off)
Td (on/off) @ 25°C:
17ns/96ns
Power - Max:
167W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 12A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
96A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship HGTP12N60A4D Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HGTP12N60A4D. Features 78nc gate charge. Base Part Number: hgtp12n60. It features igbt 600v 54a 167w through hole to-220-3. It has a trr (reverse recovery time) of 30ns. The product is available in through hole configuration. The maximum collector current includes 54a. Features 2.7v @ 15v, 12a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 55µj (on), 50µj (off). Td (on/off) value of 17ns/96ns. The maximum power of the product is 167w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 12a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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