ON Semiconductor HGTP10N120BN
Product Information
Gate Charge:
100nC
Base Part Number:
HGTP10
Detailed Description:
IGBT NPT 1200V 35A 298W Through Hole TO-220-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
35A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-220-3
Packaging:
Tube
Switching Energy:
320µJ (on), 800µJ (off)
Td (on/off) @ 25°C:
23ns/165ns
Power - Max:
298W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
NPT
Test Condition:
960V, 10A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
80A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTP10N120BN. Features 100nc gate charge. Base Part Number: hgtp10. It features igbt npt 1200v 35a 298w through hole to-220-3. The product is available in through hole configuration. The maximum collector current includes 35a. Features 2.7v @ 15v, 10a. The product has -55°c ~ 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 320µj (on), 800µj (off). Td (on/off) value of 23ns/165ns. The maximum power of the product is 298w. It carries standard input type. Moreover, the product comes in to-220-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 960v, 10a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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