ON Semiconductor HGTG11N120CN
Product Information
Gate Charge:
100nC
Base Part Number:
HGTG11N120
Detailed Description:
IGBT NPT 1200V 43A 298W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
43A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 11A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
400µJ (on), 1.3mJ (off)
Td (on/off) @ 25°C:
23ns/180ns
Power - Max:
298W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
NPT
Test Condition:
960V, 11A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
80A
Manufacturer:
ON Semiconductor
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Yes. We ship HGTG11N120CN Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HGTG11N120CN. Features 100nc gate charge. Base Part Number: hgtg11n120. It features igbt npt 1200v 43a 298w through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 43a. Features 2.4v @ 15v, 11a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 400µj (on), 1.3mj (off). Td (on/off) value of 23ns/180ns. The maximum power of the product is 298w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 960v, 11a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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