ON Semiconductor HGTD7N60C3S9A

HGTD7N60C3S9A ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
23nC
Base Part Number:
HGTD7N60
Detailed Description:
IGBT 600V 14A 60W Surface Mount TO-252AA
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
14A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 7A
Supplier Device Package:
TO-252AA
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Cut Tape (CT)
Switching Energy:
165µJ (on), 600µJ (off)
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
60W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector Pulsed (Icm):
56A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTD7N60C3S9A. Features 23nc gate charge. Base Part Number: hgtd7n60. It features igbt 600v 14a 60w surface mount to-252aa. The product is available in surface mount configuration. The maximum collector current includes 14a. Features 2v @ 15v, 7a. to-252aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. In addition, cut tape (ct) is the available packaging type of the product. Provide switching energy up to 165µj (on), 600µj (off). The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 60w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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HGTD7N60C3S, HGTP7N60C3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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