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This is manufactured by ON Semiconductor. The manufacturer part number is HGTD1N120BNS9A. It has typical 19 weeks of manufacturer standard lead time. The maximum collector current includes 5.3a. It features igbt npt 1200v 5.3a 60w surface mount to-252aa. Features 2.9v @ 15v, 1a. Td (on/off) value of 15ns/67ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Features 14nc gate charge. Base Part Number: hgtd1n120. The maximum collector emitter breakdown voltage of the product is 1200v. Provide switching energy up to 70µj (on), 90µj (off). Test condition included 960v, 1a, 82ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in surface mount configuration. to-252aa is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 60w.
For more information please check the datasheets.
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