ON Semiconductor HGT1S10N120BNST
Product Information
Dimensions:
10.67 x 11.33 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
298 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
35A
Detailed Description:
IGBT 1200V 35A 298W Surface Mount TO-263AB
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 10A
Td (on/off) @ 25°C:
23ns/165ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge:
100nC
Base Part Number:
HGT1S10
Voltage - Collector Emitter Breakdown (Max):
1200V
Switching Energy:
320µJ (on), 800µJ (off)
Test Condition:
960V, 10A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Current - Collector Pulsed (Icm):
80A
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB
Packaging:
Cut Tape (CT)
Power - Max:
298W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship HGT1S10N120BNST Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is HGT1S10N120BNST. The given dimensions of the product include 10.67 x 11.33 x 4.83mm. The product is available in surface mount configuration. Provides up to 298 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of d2pak (to-263). Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 35a. It features igbt 1200v 35a 298w surface mount to-263ab. Features 2.7v @ 15v, 10a. Td (on/off) value of 23ns/165ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features 100nc gate charge. Base Part Number: hgt1s10. The maximum collector emitter breakdown voltage of the product is 1200v. Provide switching energy up to 320µj (on), 800µj (off). Test condition included 960v, 10a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-263ab is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 298w.
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