ON Semiconductor FGH40T65UQDF_F155
Product Information
Gate Charge:
306nC
Reverse Recovery Time (trr):
89ns
Detailed Description:
IGBT Trench Field Stop 650V 80A Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
80A
Standard Package:
450
Vce(on) (Max) @ Vge, Ic:
1.67V @ 15V, 40A
Supplier Device Package:
TO-247-3
Manufacturer Standard Lead Time:
6 Weeks
Voltage - Collector Emitter Breakdown (Max):
650V
Td (on/off) @ 25°C:
32ns/271ns
Switching Energy:
989µJ (on), 310µJ (off)
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
Trench Field Stop
Test Condition:
400V, 40A, 6 Ohm, 15V
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FGH40T65UQDF_F155. Features 306nc gate charge. It has a trr (reverse recovery time) of 89ns. It features igbt trench field stop 650v 80a through hole to-247-3. The product is available in through hole configuration. The maximum collector current includes 80a. It is available in the standard package of 450. Features 1.67v @ 15v, 40a. to-247-3 is the supplier device package value. It has typical 6 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 650v. Td (on/off) value of 32ns/271ns. Provide switching energy up to 989µj (on), 310µj (off). The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT trench field stop type. Test condition included 400v, 40a, 6 ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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