ON Semiconductor FGH30N6S2D
Product Information
Gate Charge:
23nC
Base Part Number:
FGH30
Detailed Description:
IGBT 600V 45A 167W Through Hole TO-247-3
Reverse Recovery Time (trr):
46ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
45A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 12A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
55µJ (on), 100µJ (off)
Td (on/off) @ 25°C:
6ns/40ns
Power - Max:
167W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
390V, 12A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
108A
Manufacturer:
ON Semiconductor
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Yes. We ship FGH30N6S2D Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGH30N6S2D. Features 23nc gate charge. Base Part Number: fgh30. It features igbt 600v 45a 167w through hole to-247-3. It has a trr (reverse recovery time) of 46ns. The product is available in through hole configuration. The maximum collector current includes 45a. Features 2.5v @ 15v, 12a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 55µj (on), 100µj (off). Td (on/off) value of 6ns/40ns. The maximum power of the product is 167w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 390v, 12a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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