ON Semiconductor FGAF40N60SMD
Product Information
Dimensions:
15.7 x 3.2 x 26.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
115 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
80 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PF
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
41 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Field Stop 600V 80A 115W Through Hole TO-3PF
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 40A
Td (on/off) @ 25°C:
12ns/92ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3 Full Pack
Gate Charge:
119nC
Base Part Number:
FGAF4
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
36ns
Switching Energy:
870µJ (on), 260µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PF
Packaging:
Tube
Power - Max:
115W
Customer Reference:
Checking for live stock
FAQs
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520507 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520507.
Yes. We ship FGAF40N60SMD Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGAF40N60SMD. The given dimensions of the product include 15.7 x 3.2 x 26.7mm. The product is available in through hole configuration. Provides up to 115 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 80 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pf. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 41 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt field stop 600v 80a 115w through hole to-3pf. Features 1.9v @ 15v, 40a. Td (on/off) value of 12ns/92ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3 full pack. Features 119nc gate charge. Base Part Number: fgaf4. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 36ns. Provide switching energy up to 870µj (on), 260µj (off). Test condition included 400v, 40a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 115w.
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