ON Semiconductor FGA6530WDF
Product Information
Current - Collector (Ic) (Max):
60A
Detailed Description:
IGBT Trench Field Stop 650V 60A 176W Through Hole TO-3PN
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 30A
Td (on/off) @ 25°C:
12ns/42.4ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
37.4nC
Base Part Number:
FGA6530
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
81ns
Switching Energy:
960µJ (on), 162µJ (off)
Test Condition:
400V, 30A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
90A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN
Packaging:
Tube
Power - Max:
176W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship FGA6530WDF Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA6530WDF. The maximum collector current includes 60a. It features igbt trench field stop 650v 60a 176w through hole to-3pn. Features 2.2v @ 15v, 30a. Td (on/off) value of 12ns/42.4ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 37.4nc gate charge. Base Part Number: fga6530. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 81ns. Provide switching energy up to 960µj (on), 162µj (off). Test condition included 400v, 30a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 176w.
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