ON Semiconductor FGA50N100BNTTU
Product Information
Gate Charge:
257nC
Base Part Number:
FGA50
Detailed Description:
IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-3P
Packaging:
Tube
Td (on/off) @ 25°C:
34ns/243ns
Power - Max:
156W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Voltage - Collector Emitter Breakdown (Max):
1000V
IGBT Type:
NPT and Trench
Test Condition:
600V, 60A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship FGA50N100BNTTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA50N100BNTTU. Features 257nc gate charge. Base Part Number: fga50. It features igbt npt and trench 1000v 50a 156w through hole to-3p. The product is available in through hole configuration. The maximum collector current includes 50a. Features 2.9v @ 15v, 60a. The product has -55°c ~ 150°c (tj) operating temperature range. to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. Td (on/off) value of 34ns/243ns. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. The maximum collector emitter breakdown voltage of the product is 1000v. Features an IGBT npt and trench type. Test condition included 600v, 60a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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