ON Semiconductor FGA40N65SMD
Product Information
Dimensions:
16.2 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
349 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Field Stop 650V 80A 349W Through Hole TO-3PN
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 40A
Td (on/off) @ 25°C:
12ns/92ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
119nC
Base Part Number:
FGA40N65
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
42ns
Switching Energy:
820µJ (on), 260µJ (off)
Test Condition:
400V, 40A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PN
Packaging:
Tube
Power - Max:
349W
Customer Reference:
Checking for live stock
FAQs
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Yes. We ship FGA40N65SMD Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FGA40N65SMD. The given dimensions of the product include 16.2 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 349 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. The maximum collector current includes 80a. It features igbt field stop 650v 80a 349w through hole to-3pn. Features 2.5v @ 15v, 40a. Td (on/off) value of 12ns/92ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 119nc gate charge. Base Part Number: fga40n65. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 42ns. Provide switching energy up to 820µj (on), 260µj (off). Test condition included 400v, 40a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 349w.
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