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This is manufactured by ON Semiconductor. The manufacturer part number is FGA30S120P. The given dimensions of the product include 15.8 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 348 w maximum power dissipation. Whereas features a 1300 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 78nc gate charge. Base Part Number: fga30s120. It features igbt trench field stop 1300v 60a 348w through hole to-3pn. The maximum collector current includes 60a. Features 2.3v @ 15v, 30a. to-3pn is the supplier device package value. It has typical 47 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1300v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 348w. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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