ON Semiconductor NGTB50N60FL2WG
Product Information
Current - Collector (Ic) (Max):
100A
Detailed Description:
IGBT Trench Field Stop 600V 100A 417W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 50A
Td (on/off) @ 25°C:
100ns/237ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
220nC
Base Part Number:
NGTB50
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
94ns
Switching Energy:
1.5mJ (on), 460µJ (off)
Test Condition:
400V, 50A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
200A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
417W
Customer Reference:
Checking for live stock
FAQs
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship NGTB50N60FL2WG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB50N60FL2WG. The maximum collector current includes 100a. It features igbt trench field stop 600v 100a 417w through hole to-247-3. Features 2v @ 15v, 50a. Td (on/off) value of 100ns/237ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 220nc gate charge. Base Part Number: ngtb50. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 94ns. Provide switching energy up to 1.5mj (on), 460µj (off). Test condition included 400v, 50a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 417w.
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