ON Semiconductor NGTB30N60L2WG
Product Information
Gate Charge:
166nC
Base Part Number:
NGTB30
Detailed Description:
IGBT 600V 100A 225W Through Hole TO-247-3
Reverse Recovery Time (trr):
70ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
100A
Vce(on) (Max) @ Vge, Ic:
1.6V @ 15V, 30A
Operating Temperature:
175°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
310µJ (on), 1.14mJ (off)
Td (on/off) @ 25°C:
100ns/390ns
Power - Max:
225W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 30A, 30Ohm, 15V
Current - Collector Pulsed (Icm):
60A
Manufacturer:
ON Semiconductor
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Yes. We ship NGTB30N60L2WG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N60L2WG. Features 166nc gate charge. Base Part Number: ngtb30. It features igbt 600v 100a 225w through hole to-247-3. It has a trr (reverse recovery time) of 70ns. The product is available in through hole configuration. The maximum collector current includes 100a. Features 1.6v @ 15v, 30a. The product has 175°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 310µj (on), 1.14mj (off). Td (on/off) value of 100ns/390ns. The maximum power of the product is 225w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 30a, 30ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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