ON Semiconductor NGTB30N135IHRWG
Product Information
Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
394 W
Maximum Continuous Collector Current:
60 A
Maximum Collector Emitter Voltage:
1350 V
Height:
21.4mm
Width:
5.3mm
Length:
16.25mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-40 °C
Switching Speed:
1MHz
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
234nC
Base Part Number:
NGTB30
Detailed Description:
IGBT Trench Field Stop 1350V 60A 394W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.65V @ 15V, 30A
Operating Temperature:
-40°C ~ 175°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
850µJ (off)
Td (on/off) @ 25°C:
-/250ns
Power - Max:
394W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1350V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 30A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
120A
Manufacturer:
ON Semiconductor
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Yes. We ship NGTB30N135IHRWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N135IHRWG. The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 394 w maximum power dissipation. The product has a maximum 60 a continuous collector current . Whereas features a 1350 v of collector emitter voltage (max). In addition, the height is 21.4mm. Furthermore, the product is 5.3mm wide. Its accurate length is 16.25mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. Features 234nc gate charge. Base Part Number: ngtb30. It features igbt trench field stop 1350v 60a 394w through hole to-247. The maximum collector current includes 60a. Features 2.65v @ 15v, 30a. The product has -40°c ~ 175°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 850µj (off). Td (on/off) value of -/250ns. The maximum power of the product is 394w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1350v. Features an IGBT trench field stop type. Test condition included 600v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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