ON Semiconductor NGTB30N120IHLWG
Product Information
Gate Charge:
420nC
Base Part Number:
NGTB30
Detailed Description:
IGBT Trench Field Stop 1200V 60A 260W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
60A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 30A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
1mJ (off)
Td (on/off) @ 25°C:
-/360ns
Power - Max:
260W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 30A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
320A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NGTB30N120IHLWG. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NGTB30N120IHLWG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12863427 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12863427.
Yes. We ship NGTB30N120IHLWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB30N120IHLWG. Features 420nc gate charge. Base Part Number: ngtb30. It features igbt trench field stop 1200v 60a 260w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 60a. Features 2.2v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 1mj (off). Td (on/off) value of -/360ns. The maximum power of the product is 260w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 30a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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