ON Semiconductor NGTB25N120LWG
Product Information
Gate Charge:
200nC
Base Part Number:
NGTB25
Detailed Description:
IGBT Trench Field Stop 1200V 50A 192W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 25A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
3.4mJ (on), 800µJ (off)
Td (on/off) @ 25°C:
89ns/235ns
Power - Max:
192W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 25A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
200A
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship NGTB25N120LWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB25N120LWG. Features 200nc gate charge. Base Part Number: ngtb25. It features igbt trench field stop 1200v 50a 192w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 50a. Features 2.3v @ 15v, 25a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 3.4mj (on), 800µj (off). Td (on/off) value of 89ns/235ns. The maximum power of the product is 192w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 25a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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