ON Semiconductor NGTB20N120IHWG
Product Information
Maximum Continuous Collector Current:
40 A
Dimensions:
16.25 x 5.3 x 21.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
341 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
1200 V
Height:
21.4mm
Width:
5.3mm
Length:
16.25mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Energy Rating:
0.92mJ
Minimum Operating Temperature:
-40 °C
Switching Speed:
1MHz
Channel Type:
N
Gate Capacitance:
3590pF
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
150nC
Base Part Number:
NGTB20
Detailed Description:
IGBT Trench Field Stop 1200V 40A 341W Through Hole TO-247-3
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
40A
Vce(on) (Max) @ Vge, Ic:
2.65V @ 15V, 20A
Operating Temperature:
-40°C ~ 175°C (TJ)
Supplier Device Package:
TO-247-3
Packaging:
Tube
Switching Energy:
480µJ (off)
Td (on/off) @ 25°C:
-/170ns
Power - Max:
341W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
Trench Field Stop
Test Condition:
600V, 20A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
80A
Manufacturer:
ON Semiconductor
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Yes. We ship NGTB20N120IHWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NGTB20N120IHWG. The product has a maximum 40 a continuous collector current . The given dimensions of the product include 16.25 x 5.3 x 21.4mm. The product is available in through hole configuration. Provides up to 341 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 21.4mm. Furthermore, the product is 5.3mm wide. Its accurate length is 16.25mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. It has approximately 0.92mj energy rating . Whereas, the minimum operating temperature of the product is -40 °c. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 3590pf gate capacitance . It contains 3 pins. The product offers single transistor configuration. Features 150nc gate charge. Base Part Number: ngtb20. It features igbt trench field stop 1200v 40a 341w through hole to-247-3. The maximum collector current includes 40a. Features 2.65v @ 15v, 20a. The product has -40°c ~ 175°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 480µj (off). Td (on/off) value of -/170ns. The maximum power of the product is 341w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT trench field stop type. Test condition included 600v, 20a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.
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