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ON Semiconductor NGTB35N60FL2WG

NGTB35N60FL2WG ON Semiconductor
NGTB35N60FL2WG
ON Semiconductor

Product Information

Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
70 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
70A
Detailed Description:
IGBT Trench Field Stop 600V 70A 300W Through Hole TO-247
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 35A
Td (on/off) @ 25°C:
72ns/132ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
125nC
Base Part Number:
NGTB35
Voltage - Collector Emitter Breakdown (Max):
600V
Reverse Recovery Time (trr):
68ns
Switching Energy:
840µJ (on), 280µJ (off)
Test Condition:
400V, 35A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Packaging:
Tube
Power - Max:
300W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB35N60FL2WG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 70a. It features igbt trench field stop 600v 70a 300w through hole to-247. Features 2v @ 15v, 35a. Td (on/off) value of 72ns/132ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 125nc gate charge. Base Part Number: ngtb35. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 68ns. Provide switching energy up to 840µj (on), 280µj (off). Test condition included 400v, 35a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 300w.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Fab Change 22/May/2020(PCN Assembly/Origin)
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Contact Mask Change 17/Dec/2020(PCN Design/Specification)
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NGTB35N60FL2WG(Datasheets)

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You can order ON Semiconductor brand products with NGTB35N60FL2WG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NGTB35N60FL2WG. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NGTB35N60FL2WG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12421911 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12421911.
Yes. We ship NGTB35N60FL2WG Internationally to many countries around the world.