ON Semiconductor NGTB10N60R2DT4G

NGTB10N60R2DT4G ON Semiconductor
NGTB10N60R2DT4G
NGTB10N60R2DT4G
ON Semiconductor

Product Information

Maximum Continuous Collector Current:
20 A
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
72 W
Maximum Operating Temperature:
+175 °C
Maximum Collector Emitter Voltage:
600 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
DPAK (TO-252)
Switching Speed:
1MHz
Channel Type:
N
Gate Capacitance:
1340pF
Pin Count:
3
Transistor Configuration:
Single
Gate Charge:
53nC
Base Part Number:
NGTB10
Detailed Description:
IGBT 600V 20A 72W Surface Mount DPAK
Reverse Recovery Time (trr):
90ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
20A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 10A
Operating Temperature:
175°C (TJ)
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Switching Energy:
412µJ (on), 140µJ (off)
Td (on/off) @ 25°C:
48ns/120ns
Power - Max:
72W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Collector Emitter Breakdown (Max):
600V
Test Condition:
300V, 10A, 30Ohm, 15V
Current - Collector Pulsed (Icm):
40A
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NGTB10N60R2DT4G. The product has a maximum 20 a continuous collector current . The given dimensions of the product include 6.73 x 6.22 x 2.38mm. The product is available in surface mount configuration. Provides up to 72 w maximum power dissipation. It has a maximum operating temperature of +175 °c. Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of dpak (to-252). It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has approximately 1340pf gate capacitance . It contains 3 pins. The product offers single transistor configuration. Features 53nc gate charge. Base Part Number: ngtb10. It features igbt 600v 20a 72w surface mount dpak. It has a trr (reverse recovery time) of 90ns. The maximum collector current includes 20a. Features 2.1v @ 15v, 10a. The product has 175°c (tj) operating temperature range. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. Provide switching energy up to 412µj (on), 140µj (off). Td (on/off) value of 48ns/120ns. The maximum power of the product is 72w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 300v, 10a, 30ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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NGTB10N60R2DT4G(Datasheets)

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