Microsemi Corporation APT64GA90B
Product Information
Gate Charge:
162nC
Td (on/off) @ 25°C:
18ns/131ns
Detailed Description:
IGBT PT 900V 117A 500W Through Hole TO-247 [B]
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
117A
Vce(on) (Max) @ Vge, Ic:
3.1V @ 15V, 38A
Supplier Device Package:
TO-247 [B]
Manufacturer Standard Lead Time:
29 Weeks
Voltage - Collector Emitter Breakdown (Max):
900V
Packaging:
Tube
Switching Energy:
1857µJ (on), 2311µJ (off)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500W
Input Type:
Standard
Package / Case:
TO-247-3
IGBT Type:
PT
Test Condition:
600V, 38A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm):
193A
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11999197 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11999197.
Yes. We ship APT64GA90B Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT64GA90B. Features 162nc gate charge. Td (on/off) value of 18ns/131ns. It features igbt pt 900v 117a 500w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 117a. Features 3.1v @ 15v, 38a. to-247 [b] is the supplier device package value. It has typical 29 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 900v. In addition, tube is the available packaging type of the product. Provide switching energy up to 1857µj (on), 2311µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 500w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT pt type. Test condition included 600v, 38a, 4.7ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
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