Rohm Semiconductor RGT16NS65DGTL
Product Information
Gate Charge:
21nC
Td (on/off) @ 25°C:
13ns/33ns
Detailed Description:
IGBT Trench Field Stop 650V 16A 94W Surface Mount LPDS (TO-263S)
Reverse Recovery Time (trr):
42ns
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
16A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 8A
Supplier Device Package:
LPDS (TO-263S)
Manufacturer Standard Lead Time:
17 Weeks
Voltage - Collector Emitter Breakdown (Max):
650V
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 175°C (TJ)
Power - Max:
94W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IGBT Type:
Trench Field Stop
Test Condition:
400V, 8A, 10Ohm, 15V
Current - Collector Pulsed (Icm):
24A
Manufacturer:
Rohm Semiconductor
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship RGT16NS65DGTL Internationally to many countries around the world.
This is manufactured by Rohm Semiconductor. The manufacturer part number is RGT16NS65DGTL. Features 21nc gate charge. Td (on/off) value of 13ns/33ns. It features igbt trench field stop 650v 16a 94w surface mount lpds (to-263s). It has a trr (reverse recovery time) of 42ns. The product is available in surface mount configuration. The maximum collector current includes 16a. Features 2.1v @ 15v, 8a. lpds (to-263s) is the supplier device package value. It has typical 17 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 650v. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 94w. It carries standard input type. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Features an IGBT trench field stop type. Test condition included 400v, 8a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The rohm semiconductor's product offers user-desired applications.
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