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This is manufactured by ON Semiconductor. The manufacturer part number is NGTB15N60S1EG. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 117 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 30 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 30a. It features igbt npt 600v 30a 117w through hole to-220ab. Features 1.7v @ 15v, 15a. Td (on/off) value of 65ns/170ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3. Features 88nc gate charge. Base Part Number: ngtb15. The maximum collector emitter breakdown voltage of the product is 600v. It has a trr (reverse recovery time) of 270ns. Provide switching energy up to 550µj (on), 350µj (off). Test condition included 400v, 15a, 22ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 117w.
For more information please check the datasheets.
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