Renesas Electronics America RJH60D5BDPQ-E0#T2
Product Information
Gate Charge:
78nC
Base Part Number:
RJH60D
Detailed Description:
IGBT Trench 600V 75A 200W Through Hole TO-247
Reverse Recovery Time (trr):
25ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
75A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 37A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
400µJ (on), 810µJ (off)
Td (on/off) @ 25°C:
50ns/130ns
Power - Max:
200W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
600V
IGBT Type:
Trench
Test Condition:
300V, 37A, 5Ohm, 15V
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH60D5BDPQ-E0#T2. Features 78nc gate charge. Base Part Number: rjh60d. It features igbt trench 600v 75a 200w through hole to-247. It has a trr (reverse recovery time) of 25ns. The product is available in through hole configuration. The maximum collector current includes 75a. Features 2.2v @ 15v, 37a. The product has 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 400µj (on), 810µj (off). Td (on/off) value of 50ns/130ns. The maximum power of the product is 200w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench type. Test condition included 300v, 37a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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