Renesas Electronics America RJH60D2DPP-M0#T2
Product Information
Gate Charge:
19nC
Base Part Number:
RJH60D
Detailed Description:
IGBT Trench 600V 25A 34W Through Hole TO-220FL
Reverse Recovery Time (trr):
100ns
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
25A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 12A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
TO-220FL
Packaging:
Tube
Switching Energy:
100µJ (on), 160µJ (off)
Td (on/off) @ 25°C:
32ns/85ns
Power - Max:
34W
Input Type:
Standard
Package / Case:
TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max):
600V
IGBT Type:
Trench
Test Condition:
300V, 12A, 5Ohm, 15V
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJH60D2DPP-M0#T2. Features 19nc gate charge. Base Part Number: rjh60d. It features igbt trench 600v 25a 34w through hole to-220fl. It has a trr (reverse recovery time) of 100ns. The product is available in through hole configuration. The maximum collector current includes 25a. Features 2.2v @ 15v, 12a. The product has 150°c (tj) operating temperature range. to-220fl is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 100µj (on), 160µj (off). Td (on/off) value of 32ns/85ns. The maximum power of the product is 34w. It carries standard input type. Moreover, the product comes in to-220-3 full pack. The maximum collector emitter breakdown voltage of the product is 600v. Features an IGBT trench type. Test condition included 300v, 12a, 5ohm, 15v. The renesas electronics america's product offers user-desired applications.
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